期刊
APPLIED PHYSICS LETTERS
卷 93, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3059566
关键词
charge compensation; charge injection; dielectric polarisation; electric domains; ferroelectric switching; ferroelectric thin films; lead compounds; thin film capacitors
资金
- FCT
- FEDER
- POCI2010 [POCI/ CTM/ 61071/ 2004]
Observation of abnormal (against the applied electric field) domain switching in Pb(ZrxTi1-x)O-3 films by piezoresponse force microscopy is reported. In some grains polarization orients opposite to the external field in the presence of the applied field, while the rest of the film volume switches in a normal way. This effect is observed in thin film capacitors which excludes charge injection effect and spontaneous backswitching due the built-in field, which is the possible reason for this behavior. The abnormal switching behavior is attributed to the charge compensation effect at the boundaries of the grains with rhombohedral structure.
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