The characteristics and mechanism of conduction/set process in TiN/ZnO/Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. The dependencies of memory behavior on cell area, operating temperature, and frequency indicate that the conduction mechanism in low-resistance states is due to electrons hopping through filament paths. We also identify that the set process is essentially equivalent to a soft dielectric breakdown associated with a polarization effect caused by the migration of space charges under a low electric field stress. The generation/recovery of oxygen vacancies and nonlattice oxygen ions play a critical role in resistance switching. (C) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据