期刊
APPLIED PHYSICS LETTERS
卷 93, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3033404
关键词
alumina; atomic layer deposition; gallium arsenide; III-V semiconductors; indium compounds; reduction (chemical); semiconductor-insulator boundaries; surface chemistry; X-ray photoelectron spectra
资金
- FCRP on Materials, Structures, and Devices
- National Institute of Standards and Technology, Semiconductor Electronics Division [IC 2010]
- Texas Enterprise Fund
- Korea Institute of Industrial Technology(KITECH) [10030694] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-357-D00155] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The reduction in III-V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS). TMA is found to reduce the interfacial oxides during the initial exposure. Concentrations of Ga oxide on the surface processed at 300 degrees C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPS.
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