相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Valence band anticrossing in GaBixAs1-x
K. Alberi et al.
APPLIED PHYSICS LETTERS (2007)
GaBiAs: A material for optoelectronic terahertz devices
K. Bertulis et al.
APPLIED PHYSICS LETTERS (2006)
Bismuth surfactant growth of the dilute nitride GaNxAs1-x
EC Young et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Ion beam characterization of GaAs1-x-yNxBiy epitaxial layers
P Wei et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2004)
Molecular beam epitaxy growth of GaAs1-xBix
S Tixier et al.
APPLIED PHYSICS LETTERS (2003)