A giant electromechanical d(33) coefficient 110 pC/N is obtained in ferroelectric V-doped ZnO films, which is nearly one order of magnitude higher than that of undoped samples. It is considered that the switchable spontaneous polarization induced by V dopants and the accompanying relatively high permittivity should be responsible for the enhancement of piezoelectric response. Moreover, from another point of view, an easier rotation of V-O bonds which are noncollinear with c axis under electric field might be the microscopic origin of this anomaly. The improved piezoelectric properties could make V-doped ZnO a promising candidate for piezoelectric devices. (c) 2008 American Institute of Physics.
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