Electrically injected InAs/GaAs quantum dot spin laser operating at 200 K

A spin-polarized vertical cavity surface emitting laser, with InAs/GaAs self-organized quantum dots as the active gain media, has been fabricated and characterized. Electron spin injection is achieved via a MnAs/GaAs Schottky tunnel contact. The laser is operated at 200 K and, at this temperature, the degree of circular polarization in the output is 8% and the maximum threshold current reduction is 14%. These effects are not observed in identical control devices with nonmagnetic contacts. (C) 2008 American Institute of Physics.