期刊
APPLIED PHYSICS LETTERS
卷 93, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2965120
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资金
- National Research Foundation of Korea [과06A1104] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the interfacial electronic structures of indium tin oxide ( ITO )/ molybdenum trioxide (MoO3 ) / N, N '-bis(1-naphthyl)-N,N-(diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) using in situ ultraviolet and x- ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light- emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance. (c) 2008 American Institute of Physics.
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