4.6 Article

SOCl2 enhanced photovoltaic conversion of single wall carbon nanotube/n-silicon heterojunctions

期刊

APPLIED PHYSICS LETTERS
卷 93, 期 24, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3050465

关键词

carbon nanotubes; carrier density; carrier mobility; electron-hole recombination; elemental semiconductors; Fermi level; p-n heterojunctions; silicon; solar cells; sulphur compounds; thin films

资金

  1. DOE [DE-FG36-06 GO 86072]
  2. Arkansas Science and Technology Authority (ASTA ) [08-CAT-03]

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We report solar cells based on high-density p-n heterojunctions between single wall carbon nanotubes (SWCNTs) and a n-type silicon wafer. Chemical modification by thionyl chloride of the SWCNT coating films was found to significantly increase the conversion efficiency by more than 45% through adjusting the Fermi level and increasing the carrier concentration and mobility. Electron-hole pairs are optically excited in the numerous heterojunctions formed between SOCl2-treated SWCNTs thin coating and n-type silicon substrate, and then split and transported through SWCNTs (holes) and n-Si (electrons), respectively.

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