4.6 Article

Quantum resistance metrology in graphene

期刊

APPLIED PHYSICS LETTERS
卷 93, 期 22, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3043426

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carbon; contact resistance; nanostructured materials; quantum Hall effect

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  1. Stichting Fundamenteel Onderzoek der Materie (FOM)
  2. Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)

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We performed a metrological characterization of the quantum Hall resistance in a 1 mu m wide graphene Hall bar. The longitudinal resistivity in the center of the nu=+/- 2 quantum Hall plateaus vanishes within the measurement noise of 20 m Omega up to 2 mu A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 mu A current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

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