相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction
Onise Sharia et al.
PHYSICAL REVIEW B (2007)
Work function engineering using lanthanum oxide interfacial layers
H. N. Alshareef et al.
APPLIED PHYSICS LETTERS (2006)
Determination of free carrier density and space charge layer variation in nanocrystalline In3+ doped tin oxides using Fourier transform infrared spectroscopy
Christina Drake et al.
APPLIED PHYSICS LETTERS (2006)
Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility -: art. no. 023508
PD Kirsch et al.
JOURNAL OF APPLIED PHYSICS (2006)
Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
MA Quevedo-Lopez et al.
APPLIED PHYSICS LETTERS (2005)
Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction
DJ Lichtenwalner et al.
JOURNAL OF APPLIED PHYSICS (2005)
Thermal stability of hafnium-silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy
MA Quevedo-Lopez et al.
APPLIED PHYSICS LETTERS (2005)
Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics
S Stemmer et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
S Guha et al.
JOURNAL OF APPLIED PHYSICS (2001)
Interfacial reactions between thin rare-earth-metal oxide films and Si substrates
H Ono et al.
APPLIED PHYSICS LETTERS (2001)