Performance enhancement of n-channel inversion type InxGa1-xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Significant enhancement in metal-oxide-semiconductor field effect transistor (MOSFET) transport characteristics is achieved with In(x)Ga(1-x)As (x = 0.53, x = 0.20) channel material using ex situ plasma enhanced chemical vapor deposited amorphous Si layer. In(x)Ga(1-x)As MOSFETs (L= 2 mu m, V(gs)-V(t) = 2.0 V) with Si interlayer show a maximum drain current of 290 mA/mm (x = 0.53) and 2 mu A/mm (x = 0.20), which are much higher compared to devices without a Si interlayer. However, charge pumping measurements show a lower average interface state density near the intrinsic Fermi level for devices without the silicon interlayer indicating that a reduction in the midgap interface state density is not responsible for the improved transport characteristics. (C) 2008 American Institute of Physics.