Europium doped gallium oxide thin film electroluminescent devices with bright, red emission (611 nm) and relatively low threshold voltages of 60 V were produced using pulsed laser deposition. The use of transparent conducting electrodes of amorphous InGaZnO on transparent aluminum titanium oxide/indium tin oxide/7059 Corning glass substrates resulted in a device that is transparent throughout the visible spectrum. At 100 V, with 1 kHz excitation, the luminance was 221 cd/m(2). The Sawyer-Tower circuit analysis and time dependent emission measurements suggest that the charge trapping at the aluminum titanium oxide/Ga(2)O(3):Eu interface plays an important role in producing efficient emission.
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