期刊
APPLIED PHYSICS LETTERS
卷 92, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2943322
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资金
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030519] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Korea Institute of Industrial Technology(KITECH) [10029943] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [핵06A2801, 핵06A2808, R0A-2008-000-20052-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We perform first-principles calculations on metal-HfO2 interfaces in the presence of oxygen vacancies. Pt, Al, Ti, and Ag are considered as electrodes. It is found that oxygen vacancies are strongly attracted to the interface with binding energies of up to several eVs. In addition, the vacancy affinity of interfaces is proportional to the work function of metals, which is understood by the transition level of the vacancy and metal-Hf bonding. Interfacial segregation of vacancies significantly affects effective work functions of p metals. Our results are consistent with flatband shifts in p-type field effect transistors employing high-k dielectrics and metal gates. (c) 2008 American Institute of Physics.
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