相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution
Dae Sung Chung et al.
APPLIED PHYSICS LETTERS (2008)
Criteria for improved open-circuit voltage in a-Si:H(N)/c-Si(P) front heterojunction with intrinsic thin layer solar cells
Madhumita Nath et al.
JOURNAL OF APPLIED PHYSICS (2008)
Flexible inorganic nanowire light-emitting diode
Athavan Nadarajah et al.
NANO LETTERS (2008)
A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm
X. W. Sun et al.
NANO LETTERS (2008)
Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions
M. Kaya et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Schottky contact on a ZnO (0001) single crystal with conducting polymer
M. Nakano et al.
APPLIED PHYSICS LETTERS (2007)
Polyfluorene as a model system for space-charge-limited conduction
M. Arif et al.
PHYSICAL REVIEW B (2007)
Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates
Sang-Woo Kim et al.
APPLIED PHYSICS LETTERS (2007)
Charge injection and tunneling mechanism of solid state reaction silicon nanocrystal film
H. W. Lau et al.
APPLIED PHYSICS LETTERS (2006)
Electro-optical studies on MDMO-PPV:PCBM bulk-heteroj unction solar cells on the millisecond time scale:: Trapped carriers
Ton Offermans et al.
ORGANIC ELECTRONICS (2006)
Electroluminescence from ZnO nanowire/polymer composite p-n junction
CY Chang et al.
APPLIED PHYSICS LETTERS (2006)
Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery
Y Zhou et al.
APPLIED PHYSICS LETTERS (2006)
Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
Y Irokawa et al.
APPLIED PHYSICS LETTERS (2003)
Growth of epitaxial nanowires at the junctions of nanowalls
HT Ng et al.
SCIENCE (2003)
Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures
WI Park et al.
ADVANCED MATERIALS (2003)
Novel nanostructures of functional oxides synthesized by thermal evaporation
ZR Dai et al.
ADVANCED FUNCTIONAL MATERIALS (2003)
High-bias current-voltage-temperature characteristics of undoped rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon heterojunctions
MMAG Jafar
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2003)