Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall

We report the characteristics of a p-n heterojunction diode comprised of a poly (3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) as the hole-conducting p-type polymer and n-type ZnO nanowall networks. ZnO nanowall networks were synthesized on a GaN/sapphire substrate without metal catalyst using hot-wall type metal organic chemical vapor deposition. The p-n heterojunction diodes of PEDOT:PSS/ZnO nanowall exhibited a space charge limited current phenomena at forward bias and a transient reverse current recovery when a sudden reverse bias was applied from the forward bias condition. The minority carrier lifetime was estimated to be similar to 2.5 mu s. (C) 2008 American Institute of Physics.