期刊
APPLIED PHYSICS LETTERS
卷 93, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3039779
关键词
amorphous semiconductors; field effect transistors; flexible electronics; gallium compounds; indium compounds; organic semiconductors; organic-inorganic hybrid materials; thin film transistors; zinc compounds
资金
- Special Coordination Funds for Promoting Science and Technology
Complementary inverters composed of pentacene for the p-channel thin-film transistors (TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been fabricated on glass substrates. The p- and n-channel TFTs have field-effect mobilities of 0.6 and 17.1 cm(2)/V s, respectively, and inverters yield a high gain of similar to 56. Complementary five-stage ring oscillator exhibits a good dynamic operation with an output frequency of 200 Hz at 10 V. Since both channel layers are stable in air and can be formed by room temperature deposition process, the hybrid circuits are applicable to flexible electronic devices.
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