期刊
APPLIED PHYSICS LETTERS
卷 92, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2932148
关键词
-
资金
- Korea Institute of Industrial Technology(KITECH) [10029943] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A thin samarium (Sm) metal layer was introduced to improve the resistive hysteresis and switching uniformity. Sm reacts with the La(0.7)Ca(0.3)MnO(3) and forms a thin interface oxide layer, which is responsible for the switching. The switching occurs without any forming process. Compared with conventional resistive memory device based on localized filament formation, Sm/La(0.7)Ca(0.3)MnO(3) devices show area-dependent resistance which indicates uniform resistive switching. Under a positive bias, electromigration of oxygen ions (O(2-)) forms thicker oxide (SmO(x)), which dissociates under a negative bias, causes high and low resistance states, respectively. Estimated data retention of more than 10 yr was observed at 85 degrees C. (C) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据