期刊
APPLIED PHYSICS LETTERS
卷 93, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3045951
关键词
etching; silicon compounds; switches; switching
资金
- Army Research Office SBIR
- David and Lucille Packard Foundation
- Texas Instruments Leadership University Fund
- National Science Foundation [0720825]
- Direct For Computer & Info Scie & Enginr
- Division Of Computer and Network Systems [0720825] Funding Source: National Science Foundation
Vertical structures of SiO2 sandwiched between a top tungsten electrode and conducting nonmetallic substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 mu s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10(4) were demonstrated.
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