期刊
APPLIED PHYSICS LETTERS
卷 93, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3032911
关键词
aluminium compounds; conduction bands; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; semiconductor heterojunctions; valence bands; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds
资金
- Engineering and Physical Sciences Research Council, U. K. [EP/E010210/1, EP/C535553/1]
- NCESS facility [EP/E025722/1]
- French Agence Nationale de la Recherche
- Engineering and Physical Sciences Research Council [EP/E010210/1, EP/G004447/1, EP/C535553/1] Funding Source: researchfish
- EPSRC [EP/E010210/1, EP/G004447/1] Funding Source: UKRI
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43 +/- 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29 +/- 0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
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