Carrier transport mechanisms of nonvolatile memory devices based on nanocomposites consisting of ZnO nanoparticles with polymethylmethacrylate nanocomposites sandwiched between two C60 layers

Transmission electron microscope images showed that ZnO nanoparticles were formed in a polymethylmethacrylate (PMMA) layer. Current-voltage (I-V) curves for the Al/C-60/ZnO nanoparticles embedded in the PMMA layer/C-60/indium tin oxide (ITO) device at 300 K showed a current bistability with a large on/off ratio of 104, which was much larger than the on/off ratio of the device without C-60 layers, indicative of significant enhancement of memory storage. Carrier transport mechanisms of the memory effects for the Al/C-60/ZnO nanoparticles embedded in the PMMA layer/C-60/ITO device are described on the basis of the I-V results. (C) 2008 American Institute of Physics.