相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures
Musarrat Hasan et al.
APPLIED PHYSICS LETTERS (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
Chih-Yang Lin et al.
JOURNAL OF APPLIED PHYSICS (2007)
Switching characteristics of Cu2O metal-insulator-metal resistive memory
A. Chen et al.
APPLIED PHYSICS LETTERS (2007)
Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
C. B. Lee et al.
APPLIED PHYSICS LETTERS (2007)
Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides
Y. B. Nian et al.
PHYSICAL REVIEW LETTERS (2007)
HPHA effect on reversible resistive switching of Pt/Nb-doped SrTiO3 Schottky junction for nonvolatile memory application
Dong-jun Seong et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2007)
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
K Szot et al.
NATURE MATERIALS (2006)
Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films -: art. no. 042901
R Oligschlaeger et al.
APPLIED PHYSICS LETTERS (2006)
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
BJ Choi et al.
JOURNAL OF APPLIED PHYSICS (2005)
Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 -: art. no. 012107
T Fujii et al.
APPLIED PHYSICS LETTERS (2005)
Nonvolatile memory with multilevel switching:: A basic model -: art. no. 178302
MJ Rozenberg et al.
PHYSICAL REVIEW LETTERS (2004)
The role of surface oxygen vacancies upon WO3 conductivity
M Gillet et al.
SURFACE SCIENCE (2003)
Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
S Ezhilvalavan et al.
MATERIALS CHEMISTRY AND PHYSICS (2000)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
SQ Liu et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
