Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (V-th) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress. (C) 2008 American Institute of Physics.