期刊
APPLIED PHYSICS LETTERS
卷 93, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3006316
关键词
carrier density; dark conductivity; fullerene devices; fullerenes; interface phenomena; polymers; solar cells
资金
- DTI [EPSRC-GB EP/F056710/1]
- BP Solar [P3HT]
- Merck Chemicals
We demonstrate the use of a simple charge extraction measurement to determine the charge carrier densities n in annealed poly(3-hexylthiophene):methanofullerene solar cells under operating conditions. By applying charge extraction to the device under forward bias in the dark (J(dark)), we find J(dark)proportional to n(2.6). This dependence on charge density is the same as that we find for bimolecular recombination losses observed in such devices under irradiation at open circuit, suggesting that the dark current originates from bimolecular recombination at the polymer/fullerene interface.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据