期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 39, 期 12, 页码 2259-2268出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2004.836338
关键词
Chebyshev filter; CMOS; low-noise amplifier (LNA); low power; RFIC; ultrawideband (UWB)
An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-mum CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.
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