Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its lateral modification

Ferromagnetic Mn(5)Si(3)C(0.8) and Mn(5)Ge(3)C(0.8) films with Curie temperatures T(C) well above room temperature are obtained by (12)C(+)-ion implantation in antiferromagnetic Mn(5)Si(3) or ferromagnetic Mn(5)Ge(3). Patterning of the films with a gold mesh serving as a stencil mask during implantation allows a lateral modification of magnetic order creating ferromagnetic regions of Mn(5)Si(3)C(0.8) which are embedded in antiferromagnetic Mn(5)Si(3). This provides a procedure for the fabrication of magnetoelectronic hybrid devices comprised of different magnetic phases. (C) 2008 American Institute of Physics.