期刊
APPLIED PHYSICS LETTERS
卷 93, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2978249
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资金
- Nanyang Technological University
- Ministry of Education of Singapore [AcRF RG30/0]
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. (c) 2008 American Institute of Physics.
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