4.6 Article

Oxygen defect induced photoluminescence of HfO2 thin films

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APPLIED PHYSICS LETTERS
卷 93, 期 1, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2952288

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Amorphous HfO2 films prepared by e-beam deposition exhibited room-temperature photoluminescence (PL) in the visible range, i.e., at similar to 620 and 700 rim, due to oxygen vacancies involved during deposition. This PL can be enhanced by two orders in intensity by crystallizing the amorphous films in flowing argon, where a large amount of oxygen vacancies were introduced, and can be diminished by removal of the oxygen vacancies by annealing HfO2 films in oxygen. This study could help understand the defect-property relationship and provides ways to tune the PL property of HfO2 films. (c) 2008 American Institute of Physics.

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