期刊
APPLIED PHYSICS LETTERS
卷 93, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2996587
关键词
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资金
- New Energy and Industrial Technology Developing Organization (NEDO) of Japan
- Ministry of Education, Culture, Sports, Science, and Technology, Japan [17069003, 18028029, 19360009]
- Grants-in-Aid for Scientific Research [18028029] Funding Source: KAKEN
Rubrene and tetracyanoquinodimethane single-crystal transistors are fabricated incorporating secondary gates (split gates) on source and drain electrodes to reduce the interfacial barriers at the metal/semiconductor contacts. Separating the effect of the injection barriers, the intrinsic carrier transport in the semiconductor channels is extracted for the p-type rubrene crystal transistors and the n-type tetracyanoquinodimethane crystal transistors. The transconductance of the tetracyanoquinodimethane devices is drastically improved by activating the split-gate electrodes, indicating significant injection barriers in the n-type transistors. The result demonstrates that the technique is useful to improve transistor performance when it is restricted by the injection barriers. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2996587]
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