期刊
APPLIED PHYSICS LETTERS
卷 93, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2992586
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资金
- French National Research Agency (ANR)
- Region Ile-de-France
We demonstrate the use of a self-assembled monolayer of octadecanethiol on gold as thin gate dielectric for a single-walled carbon nanotube field-effect transistor. P-type transistors display very steep subthreshold slopes, greatly reduced hysteresis, and band-to-band tunneling. The suppression of the gate efficiency for n-type transistors emphasizes the key role of the electrical dipole of the molecular layer in controlling the switching. Combining the versatility of organic dielectrics with the exceptional electronic and mechanical properties of carbon nanotubes opens interesting ways toward the realization of fully organic nanoscale transistors. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2992586]
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