We report on the epitaxial growth of ultrathin ferromagnetic Fe1.7Ge layers on Ge(111) wafer. These single crystal intermetallic layers adopt the InNi2 (B8(2)) crystallographic structure. They are ferromagnetic with a Curie temperature well above room temperature. The interface between the ferromagnet layer and the Ge wafer is of high perfection. Interestingly, the annealing of the sample up to 300 degrees C alters neither the crystallographic structure, nor the interface quality, nor the magnetic properties but leads to a nearly perfect smoothening of the germanide layer surface. This high thermal robustness should open the way for the growth of fully epitaxial iron germanide/Ge hybrid structures. (C) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据