期刊
APPLIED PHYSICS LETTERS
卷 93, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2975188
关键词
-
资金
- European Union through the SiNANO Network of Excellence [IST-506844]
Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x- ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60 dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain. (C) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据