期刊
APPLIED PHYSICS LETTERS
卷 93, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2975166
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资金
- EPSRC [EP/G000190/1]
- Department of Information Technology, Government of India
- EPSRC [EP/G000190/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G000190/1] Funding Source: researchfish
We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.
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