A silicon radio-frequency single electron transistor

We report the demonstration of a silicon radio-frequency single electron transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10 mu e/root Hz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers. (c) 2008 American Institute of Physics.