相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Surfactant effects associated with te-doped InPAs alloys
J. G. Cederberg et al.
APPLIED PHYSICS LETTERS (2007)
Ground state lasing at 1.34 μm from InAs/GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition
D. Guimard et al.
APPLIED PHYSICS LETTERS (2007)
High density InAs/GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition
Denis Guimard et al.
APPLIED PHYSICS LETTERS (2006)
Improved photoluminescence of 1.26 μm InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers -: art. no. 061908
YA Chang et al.
APPLIED PHYSICS LETTERS (2005)
Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
A Portavoce et al.
PHYSICAL REVIEW B (2004)
Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition
TI Kamins et al.
JOURNAL OF APPLIED PHYSICS (2003)
Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-√3x√3-Ga(1ML),-4x1-In and-2√3x2√3-Sn surfaces at room temperature -: art. no. 085316
T Yamanaka et al.
PHYSICAL REVIEW B (2002)
Surfactant effect of Pb in the growth of Fe on Cu(111): A kinetic effect
MCG Passeggi et al.
PHYSICAL REVIEW B (2002)
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
G Mula et al.
PHYSICAL REVIEW B (2001)
GaN grown by molecular beam epitaxy with antimony as surfactant
CW Pei et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Quasi-thermodynamic model of SiGe epitaxial growth
AS Segal et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Surfactant mediated growth of MnSi1.7 on Si(001)
S Teichert et al.
APPLIED PHYSICS LETTERS (2001)
Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs
BN Zvonkov et al.
NANOTECHNOLOGY (2000)
Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
SW Jun et al.
JOURNAL OF APPLIED PHYSICS (2000)
Modeling of SiGe deposition using quantum chemistry techniques for detailed kinetic analysis
M Hierlemann et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2000)
分享论文
