期刊
APPLIED PHYSICS LETTERS
卷 85, 期 23, 页码 5760-5762出版社
AMER INST PHYSICS
DOI: 10.1063/1.1829388
关键词
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We report results of electrical output and transfer characteristics for two top-contact pentacene thin-film transistors under hydrostatic pressure at room temperature. Strong reversible increases of the drain current and the field-effect hole mobility with increasing pressure were observed, in particular for a device with relatively low current at atmospheric pressure. (C) 2004 American Institute of Physics.
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