Energy band alignment of a nitrided HfO2 film and dependence of the band gap (E-g) on annealing treatments with nitrogen plasma and ambient gases (N-2 and O-2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the HfO2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O-2 or N-2. (C) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据