Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters. (c) 2008 American Institute of Physics.