期刊
JOURNAL OF CRYSTAL GROWTH
卷 272, 期 1-4, 页码 515-519出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2004.08.082
关键词
epitaxial lateral overgrowth; FACELO; metalorganic vapor phase epitaxy; GaN
AlGaN and Si-doped GaN layers were implemented as marker layers during GaN epitaxial growth in order to get a deeper scientific understanding of the growth process on structured substrates. Both types of marker layers show a good visibility without any parasitic influences on the crystal structure or growth behavior. These marker layers were used to study the development of the different crystal facets as growth proceeds. This technique provided access to a precise control of a multistep growth sequence, enabling a thorough optimization of our facet assisted epitaxial lateral overgrowth (FACELO) process by inserting additional properly designed growth steps. (C) 2004 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据