Giant carrier mobility in single crystals of FeSb2

We report the giant carrier mobility in single crystals of FeSb(2). Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach similar to 10(5) cm(2)/V s at 8 K and are similar to 10(2) cm(2)/V s at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics. (c) 2008 American Institute of Physics.