4.6 Article

Freestanding (3,0) boron nitride nanotube: Expected to be stable well over room temperature

期刊

APPLIED PHYSICS LETTERS
卷 93, 期 22, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3040007

关键词

ab initio calculations; boron compounds; carbon nanotubes; III-V semiconductors; molecular dynamics method; semiconductor nanotubes

资金

  1. 973 Program [2007CB936204]
  2. Ministry of Education [705021, IRT0534]
  3. National NSF [10732040]
  4. Jiangsu Province Scientific Research [CX07B_064z]

向作者/读者索取更多资源

By semiempirical molecular dynamics simulations and ab initio total energy calculations, the freestanding (3,0) boron nitride nanotube (BNNT) with a diameter of 2.7 A is expected to be stable well over room temperature with remarkably higher stability than the experimentally reported (2,2) carbon nanotube. We elucidate the underlying physics by examining the variation in surface dipole and charge reordering driven by geometrical relaxation. In addition, the (3,0) BNNT can become globally stable when encapsulated in a larger BNNT.

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