期刊
APPLIED PHYSICS LETTERS
卷 93, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3028341
关键词
aluminium compounds; III-V semiconductors; light emitting diodes; luminescence; photoluminescence; semiconductor thin films; silicon compounds; sputter deposition; wide band gap semiconductors
资金
- Potentiality verification stage of Collaborative Development of Innovative Seeds
- Japan Science and Technology Agency
- Grant-in-Aid for Scientific Research on Priority Areas [20048005]
- Grants-in-Aid for Scientific Research [20048005] Funding Source: KAKEN
We demonstrated mercury-free narrow-band deep-ultraviolet luminescence from field-emission devices with Al(1-x)Gd(x)N thin films. The Al(1-x)Gd(x)N thin films were grown on fused silica substrates by a radio frequency reactive magnetron sputtering method. The deposited film shows a strong c-axis preferential orientation. A resolution limited, narrow intra-4f luminescence line from Gd(3+) ions has been observed at 315 nm. The luminescence spectrum depends on the growth temperature of the thin film, and the intensity varies as a function of the GdN mole fraction.
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