Narrow-band deep-ultraviolet light emitting device using Al1-xGdxN

We demonstrated mercury-free narrow-band deep-ultraviolet luminescence from field-emission devices with Al(1-x)Gd(x)N thin films. The Al(1-x)Gd(x)N thin films were grown on fused silica substrates by a radio frequency reactive magnetron sputtering method. The deposited film shows a strong c-axis preferential orientation. A resolution limited, narrow intra-4f luminescence line from Gd(3+) ions has been observed at 315 nm. The luminescence spectrum depends on the growth temperature of the thin film, and the intensity varies as a function of the GdN mole fraction.