期刊
APPLIED PHYSICS LETTERS
卷 93, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3036629
关键词
arrays; elemental semiconductors; etching; gallium compounds; III-V semiconductors; masks; monolayers; polymers; reflectivity; self-assembly; silicon; visible spectra; wide band gap semiconductors
资金
- National Science Council, Taiwan, R.O.C. [NSC 97-2221-E-002-045, NSC 97-2112-M-130-001-MY3]
The authors reported the use of recessive size reduction in self-assembled polystyrene sphere mask with anisotropic etching to form lenslike nipple arrays onto the surface of silicon and gallium nitride. These devices are shown to exhibit a filling factor near to an ideal close-packed condition and paraboloidlike etch profile with slope increased proportionally to the device aspect ratio. Specular reflectivity of less than 3% was observed over the visible spectral range for the 0.35-mu m-period nipple-lens arrays. Using two-dimensional rigorous coupled-wave analysis, the latter phenomenon can be ascribed to a gradual index matching mechanism accessed by a high surface-coverage semiconductor nipple array structure.
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