期刊
APPLIED PHYSICS LETTERS
卷 93, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3046788
关键词
electron-phonon interactions; iron compounds; magnesium compounds; Raman spectra; silicon; thin films; X-ray diffraction; X-ray photoelectron spectra
We present Raman study of Fe3O4 films of different thicknesses grown on single crystal Si and MgO substrates to investigate the presence of antiphase boundaries (APBs). X-ray diffraction and x-ray photoelectron spectroscopy measurements indicate that films are single phase Fe3O4 on both the substrates. The changes in frequency and linewidth of different Raman modes [A(1g) and T-2g(3)] are monitored and the electron-phonon coupling parameter (lambda) is computed. lambda is correlated with the combined effect of strain and APBs present in the grown films and it is concluded that the films grown on Si substrates are free from APBs.
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