4.6 Article

Ultrahigh-quality-factor silicon-on-insulator microring resonator

期刊

OPTICS LETTERS
卷 29, 期 24, 页码 2861-2863

出版社

OPTICAL SOC AMER
DOI: 10.1364/OL.29.002861

关键词

-

类别

向作者/读者索取更多资源

The development of ultrahigh-quality-factor (Q) silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as 1.9 +/- 0.1 dB/cm in a curved waveguide with a bending radius of 20 mum and a Q factor as high as 139.000 +/- 6.000 are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing. (C) 2004 Optical Society of America.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据