期刊
APPLIED PHYSICS LETTERS
卷 93, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3021360
关键词
electron traps; elemental semiconductors; flash memories; high-k dielectric thin films; hole traps; integrated memory circuits; MIS devices; silicon; ytterbium compounds
资金
- National Science Council (NSC) of China [NSC-97-2221-E-182-050-MY3]
- National Nano Device Laboratories [NDL97-C05SG-135]
In this letter, we proposed a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure using a high-k Yb2O3 charge trapping layer for flash memory applications. When using Fowler-Nordheim for charging and discharging, the high-k Yb2O3 MOHOS-type memories that had been annealed at 800 degrees C exhibited large threshold voltage shifting (memory window of similar to 2.2 V) and excellent data retention (charge loss of similar to 6% measured time up to 10(4) s and at room temperature) because of the higher probability for trapping the charge carrier due to the formation of the Yb-silicate layer and the smooth surface roughness.
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