期刊
APPLIED PHYSICS LETTERS
卷 93, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3012369
关键词
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资金
- ESF CRP SpiCo
- EPSRC-Lancaster Portfolio Partnership [EP/C511743]
- EPSRC [EP/E063519/1]
- excellence cluster QUEST within the German Excellence Initiative
- Engineering and Physical Sciences Research Council [EP/E063519/1] Funding Source: researchfish
- EPSRC [EP/E063519/1] Funding Source: UKRI
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3012369]
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