期刊
APPLIED PHYSICS LETTERS
卷 93, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3026746
关键词
catalysts; crystal growth from solution; excitons; Fourier transform spectra; II-VI semiconductors; infrared spectra; nanostructured materials; nanotechnology; photoluminescence; scanning electron microscopy; semiconductor doping; semiconductor growth; wide band gap semiconductors; X-ray diffraction; zinc compounds
资金
- VIEP-BUAP, Mexico
One dimensional zinc oxide nanostructures were grown by a low temperature hydrothermal process. Effects of Ga doping on the growth, crystallization, and defect distribution in them were studied by x-ray diffraction, scanning electron microscopy, photoluminescence, and Fourier-transform infrared spectroscopy techniques. It has been shown that Ga doping improves the morphological homogeneity and optical properties of ZnO nanostructures. Improved morphology of the doped nanostructures have been associated with the catalytic effect of Ga. Effects of Ga doping on the quenching of defect emission and improvement of excitonic emission in ZnO nanostructures are discussed.
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