期刊
APPLIED PHYSICS LETTERS
卷 93, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3026743
关键词
Brillouin zones; conduction bands; dangling bonds; energy gap; Fermi level; gallium compounds; III-V semiconductors; scanning tunnelling microscopy; scanning tunnelling spectroscopy; surface states; wide band gap semiconductors
资金
- Deutsche Forschungsgemeinschaft
GaN1000 cleavage surfaces were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. It is found that both the N and Ga derived intrinsic dangling bond surface states are outside of the fundamental band gap. Their band edges are both located at the Gamma point of the surface Brillouin zone. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step and defect density at the surface but not to intrinsic surface states.
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