期刊
APPLIED PHYSICS LETTERS
卷 93, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3021480
关键词
elemental semiconductors; energy gap; infrared spectra; nanostructured materials; semiconductor thin films; silicon
资金
- ANR through the financial supports of the Institut Carnot of LETI
- EU through the IP Molecular Imaging [LSHG-CT-2003-503259]
Some applications such as ultrafast detectors or high efficiency photovoltaics require absorption by thin films. However, close to the bandgap, silicon absorbs very poorly. In this letter, we show that the absorption of a 100 nm slab can be as high as 50% in the range of wavelengths 700-830 nm when using a periodic structure properly designed.
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