期刊
APPLIED PHYSICS LETTERS
卷 85, 期 25, 页码 6164-6166出版社
AMER INST PHYSICS
DOI: 10.1063/1.1840111
关键词
-
Using in situ wafer-curvature measurements of thin-film stress, we determine the critical thickness for strain relaxation in AlxGa1-xN/GaN heterostructures with 0.14less than or equal toxless than or equal to1. The surface morphology of selected films is examined by atomic force microscopy. Comparison of these measurements with critical-thickness models for brittle fracture and dislocation glide suggests that the onset of strain relaxation occurs by surface fracture for all compositions. Misfit-dislocations follow initial fracture, with slip-system selection occurring under the influence of composition-dependent changes in surface morphology. (C) 2004 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据